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FFSP1265A - onsemi

Description: Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery

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PCB Footprints
FFSP1265A - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FFSP1265A
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FFSP1265A - onsemi  - 3D model - Transistor Outline, Vertical - FFSP1265A
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FFSP1265A Details

  • Manufacturer Part Number:

    FFSP1265A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-2

  • Package Description:

    TO-220, 2 PIN

  • Manufacturer Package Code:

    340BB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.75 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    70 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    15 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    115 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

FFSP1265A Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. A 4-layer PCB with a dedicated thermal layer is also recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider derating the device's power handling capability at high temperatures.
  • The maximum allowable voltage stress on the device during switching is dependent on the specific application and operating conditions. As a general guideline, it's recommended to limit the voltage stress to 10% above the maximum rated voltage to ensure reliable operation.
  • To minimize EMI in your design, use a shielded layout, keep the switching node as short as possible, and use a common-mode choke or EMI filter. Additionally, consider using a spread-spectrum clock or frequency hopping to reduce EMI emissions.
  • The recommended gate drive voltage and current for optimal switching performance are typically 10-15V and 1-2A, respectively. However, the optimal values may vary depending on the specific application and operating conditions.

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FFSP1265A Overview

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