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FGA25N120ANTDTU-F109 - onsemi

Description: NPT Trench Technology, Positive temperature coefficient; Extremely enhanced avalanche capability; Low saturation voltage: VCE(sat) , typ = 2.0V@ IC = 25A and TC = 25°C; Low switching loss: EOFF, typ = 0.96mJ@ IC= 25A and TC= 25°C

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FGA25N120ANTDTU-F109 - onsemi - PCB symbol
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PCB Footprints
FGA25N120ANTDTU-F109 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO3PN, 3-Lead, Plastic, EIAJ SC-65
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3D Models
FGA25N120ANTDTU-F109 - onsemi - 3D model - Transistor Outline, Vertical - TO3PN, 3-Lead, Plastic, EIAJ SC-65
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FGA25N120ANTDTU-F109 Details

  • Manufacturer Part Number:

    FGA25N120ANTDTU-F109

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3PN 3L

  • Manufacturer Package Code:

    340BZ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Fall Time-Max (tf):

    180 ns

  • Gate-Emitter Thr Voltage-Max:

    7.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-609 Code:

    e3

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    312 W

  • Rise Time-Max (tr):

    90 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

FGA25N120ANTDTU-F109 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FGA25N120ANTDTU-F109 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good airflow around the device, and consider using a thermal interface material to improve heat transfer between the device and heat sink.
  • The recommended gate drive voltage for the FGA25N120ANTDTU-F109 is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the FGA25N120ANTDTU-F109 can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum dv/dt rating for the FGA25N120ANTDTU-F109 is 10 kV/μs. Exceeding this rating can cause the device to fail or malfunction.

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