FGA25N120ANTDTU footprint, schematic symbol and 3D model by onsemi

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FGA25N120ANTDTU Details

The maximum junction temperature that the FGA25N120ANTDTU can withstand is 150°C.
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
The recommended gate drive voltage for the FGA25N120ANTDTU is between 10V and 15V, with a maximum of 20V.
Yes, the FGA25N120ANTDTU can be used in a parallel configuration, but it's essential to ensure that the devices are matched and the gate drive signals are synchronized to prevent uneven current sharing.
The maximum allowable voltage transient for the FGA25N120ANTDTU is 120% of the maximum rated voltage, which is 360V.

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Image	Part Number	Model
	FGA25N120ANTDTU Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
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