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FGA30S120P - onsemi

Description: RoHS compliant; High speed switching; High input impedance; Low saturation voltage: VCE(sat) =1.75V @ IC = 30A

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PCB Footprints
FGA30S120P - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O
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3D Models
FGA30S120P - onsemi  - 3D model - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FGA30S120P
  • Part Number FGA30S120P
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category Transistor IGBT
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O
  • Released Date Mar 16, 2020
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FGA30S120P Details

  • Manufacturer Part Number:

    FGA30S120P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    1300 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    350 ns

  • Gate-Emitter Thr Voltage-Max:

    7.5 V

  • Gate-Emitter Voltage-Max:

    25 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    500 W

  • Rise Time-Max (tr):

    490 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

FGA30S120P Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FGA30S120P can withstand is 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via array to dissipate heat efficiently.
  • The recommended gate drive voltage for the FGA30S120P is between 10V and 15V, with a maximum of 20V.
  • Yes, the FGA30S120P can be used in a half-bridge configuration, but it is essential to ensure that the device is properly driven and that the gate-source voltage is within the recommended range.
  • To protect the FGA30S120P from overvoltage and overcurrent, it is recommended to use a voltage clamp circuit and a current sense resistor in series with the device. Additionally, a fuse or a circuit breaker can be used to protect against overcurrent.

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FGA30S120P Overview

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