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FGA40S65SH - onsemi

Description: Last Shipments - IGBT, 650 V, 40 A Field Stop Trench

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PCB Footprints
FGA40S65SH - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O
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3D Models
FGA40S65SH - onsemi  - 3D model - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FGA40S65SH
  • Part Number FGA40S65SH
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category Transistor IGBT
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O
  • Released Date Jan 10, 2021
  • Last Modified Date Sep 19, 2024 2:45 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FGA40S65SH Details

  • Manufacturer Part Number:

    FGA40S65SH

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, SC-65, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    268 W

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    233.2 ns

  • Turn-on Time-Nom (ton):

    106.4 ns

  • VCEsat-Max:

    1.81 V

FGA40S65SH Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a heat sink or a thermal management system.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 175°C. Proper thermal management, such as heat sinking and airflow, is also crucial. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • Critical parameters to monitor during operation include the drain-source voltage (Vds), gate-source voltage (Vgs), drain current (Id), and junction temperature (Tj). It's also important to monitor the device's power dissipation and ensure it remains within the recommended limits.
  • When selecting a gate driver for the FGA40S65SH, consider the device's gate charge (Qg), gate-source voltage (Vgs), and the desired switching frequency. Choose a gate driver that can provide the required gate current and voltage, and ensure it's compatible with the device's input capacitance and switching characteristics.
  • To protect the FGA40S65SH from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, consider implementing ESD protection circuits, such as TVS diodes or ESD protection arrays, in the system design.

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FGA40S65SH Overview

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