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FGAF40N60UFDTU - onsemi

Description: High speed switching: Eoff =12uJ/A ; High input impedance; Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A

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FGAF40N60UFDTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FGAF40N60UFDT
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FGAF40N60UFDTU - onsemi  - 3D model - Transistor Outline, Vertical - FGAF40N60UFDT
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FGAF40N60UFDTU Details

  • Manufacturer Part Number:

    FGAF40N60UFDTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3PF-3L

  • Manufacturer Package Code:

    340AH

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    190 ns

  • Turn-on Time-Nom (ton):

    67 ns

FGAF40N60UFDTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FGAF40N60UFDTU can withstand is 150°C. However, it's recommended to operate the device at a junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and the heat sink, and provide adequate airflow to dissipate heat.
  • The recommended gate drive voltage for the FGAF40N60UFDTU is between 10V and 15V. However, the exact voltage may vary depending on the specific application and switching frequency.
  • Yes, the FGAF40N60UFDTU is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • To protect the FGAF40N60UFDTU from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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FGAF40N60UFDTU Overview

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