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FGAF40N60UFTU - onsemi

Description: Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A; High speed switching: Eoff =12uJ/A ; High input impedance

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FGAF40N60UFTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO3PF,MOLDED,3LD,FULLPACK (AG)
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FGAF40N60UFTU - onsemi  - 3D model - Transistor Outline, Vertical - TO3PF,MOLDED,3LD,FULLPACK (AG)
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FGAF40N60UFTU Details

  • Manufacturer Part Number:

    FGAF40N60UFTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-3PF-3L

  • Manufacturer Package Code:

    340AH

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.25

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    250 ns

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    190 ns

  • Turn-on Time-Nom (ton):

    67 ns

FGAF40N60UFTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature that FGAF40N60UFTU can withstand is 175°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
  • The recommended gate drive voltage for FGAF40N60UFTU is between 10V to 15V, with a maximum gate-source voltage of ±20V.
  • To protect FGAF40N60UFTU from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.
  • The maximum allowable power dissipation for FGAF40N60UFTU is 150W, but this value can be derated based on the operating temperature and other factors.

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FGAF40N60UFTU Overview

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