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FGB20N60SFD-F085 - onsemi

Description: Fast switching; Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A; High current capability; High input impedance; Qualified to Automotive Requirements of AEC-Q101; RoHS complaint

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FGB20N60SFD-F085 - onsemi - PCB symbol
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PCB Footprints
FGB20N60SFD-F085 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE B
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3D Models
FGB20N60SFD-F085 - onsemi - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE B
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FGB20N60SFD-F085 Details

  • Manufacturer Part Number:

    FGB20N60SFD-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-263 2L (D2PAK)

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    43 ns

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Reference Standard:

    AEC-Q101

  • Rise Time-Max (tr):

    21 ns

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    123 ns

  • Turn-on Time-Nom (ton):

    28 ns

FGB20N60SFD-F085 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FGB20N60SFD-F085 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) to fill any gaps between the device and the heat sink, and ensure the heat sink is properly mounted and secured.
  • The recommended gate drive voltage for the FGB20N60SFD-F085 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the FGB20N60SFD-F085 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is designed to operate in harsh environments. However, it's essential to follow the recommended operating conditions and guidelines to ensure the device meets the required reliability and quality standards.
  • To protect the FGB20N60SFD-F085 from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. Ensure the device is operated within the recommended voltage and current ratings, and consider using a fuse or current limiter to prevent damage from excessive current.

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FGB20N60SFD-F085 Overview

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Part Image FGB20N60SFD_F085 onsemi

600V, 20A, 2.2V, D2PAK Field Stop IGBT, TO-263 2L (D2PAK), 6400-TAPE REEL