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FGD3245G2-F085 - onsemi

Description: RoHS Compliant; Low Saturation Voltage; Qualified to AEC Q101; SCIS Energy = 320 mJ at TJ = 25°C; Logic Level Gate Drive

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FGD3245G2-F085 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-2
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FGD3245G2-F085 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-2
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FGD3245G2-F085 Details

  • Manufacturer Part Number:

    FGD3245G2-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252 3L (DPAK)

  • Manufacturer Package Code:

    369AS

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    23 A

  • Collector-Emitter Voltage-Max:

    440 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • Fall Time-Max (tf):

    15000 ns

  • Gate-Emitter Thr Voltage-Max:

    2.2 V

  • Gate-Emitter Voltage-Max:

    12 V

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Reference Standard:

    AEC-Q101

  • Rise Time-Max (tr):

    7000 ns

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AUTOMOTIVE IGNITION

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    30000 ns

  • Turn-off Time-Nom (toff):

    8100 ns

  • Turn-on Time-Max (ton):

    11000 ns

  • Turn-on Time-Nom (ton):

    3500 ns

  • VCEsat-Max:

    1.25 V

FGD3245G2-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 5.5V). Use a stable voltage regulator and decouple the input with a 10uF capacitor. Also, ensure the enable pin (EN) is properly biased to the recommended voltage level.
  • A 10uF to 22uF X5R or X7R ceramic capacitor is recommended for input decoupling. This helps to filter out noise and ensure stable operation.
  • Use a TVS diode or a zener diode to protect against overvoltage. For overcurrent protection, consider using a fuse or a PTC resettable fuse. Also, ensure the PCB layout is designed to handle the maximum current rating of the device.
  • The recommended operating temperature range is -40°C to 125°C. However, the device can operate up to 150°C with reduced performance and lifespan.

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FGD3245G2-F085 Overview

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Part Image FGD3245G2_F085 onsemi

Insulated Gate Bipolar Transistor, 23A I(C), 440V V(BR)CES, N-Channel, TO-252AA