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FGH20N60SFDTU - onsemi

Description: High input impedance; Low saturation voltage: VCE(sat) =2.2V @ IC = 20A; Fast switching: EOFF =8uJ/A ; High current capability; RoHS compliant

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FGH20N60SFDTU - onsemi - PCB symbol
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PCB Footprints
FGH20N60SFDTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK
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3D Models
FGH20N60SFDTU - onsemi - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK
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FGH20N60SFDTU Details

  • Manufacturer Part Number:

    FGH20N60SFDTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    48 ns

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    165 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    123 ns

  • Turn-on Time-Nom (ton):

    28 ns

FGH20N60SFDTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FGH20N60SFDTU is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by attaching a heat sink to the device, ensuring good thermal contact, and providing adequate airflow. The thermal resistance of the heat sink and the thermal interface material should be minimized.
  • The recommended gate drive voltage for the FGH20N60SFDTU is between 10V and 15V, with a maximum of 20V. A higher gate drive voltage can reduce switching losses but may increase the risk of gate oxide breakdown.
  • Overvoltage protection can be achieved using a voltage clamp or a zener diode. Overcurrent protection can be achieved using a current sense resistor and a comparator or an overcurrent protection IC. A fuse or a circuit breaker can also be used to disconnect the power supply in case of an overcurrent condition.
  • The recommended PCB layout for the FGH20N60SFDTU involves keeping the power loops small, using a solid ground plane, and minimizing the distance between the device and the decoupling capacitors. A 2-layer or 4-layer PCB is recommended to reduce electromagnetic interference (EMI).

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FGH20N60SFDTU Overview

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