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FGH50T65SQD-F155 - onsemi

Description: Maximum Junction Temperature: TJ =175°C; Positive Temperature Co-efficient for Easy Parallel Operating; High Current Capability; Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A; 100% of the Parts Tested for ILM(1); High Input Impedance; Fast Switching; Tighten Parameter Distribution; RoHS Compliant

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Symbol
FGH50T65SQD-F155 - onsemi - PCB symbol
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PCB Footprints
FGH50T65SQD-F155 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO_247
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3D Models
FGH50T65SQD-F155 - onsemi - 3D model - Transistor Outline, Vertical - TO_247
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FGH50T65SQD-F155 Details

  • Manufacturer Part Number:

    FGH50T65SQD-F155

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247 3L

  • Manufacturer Package Code:

    340CH

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Additional Feature:

    RC-IGBT

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    268 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    119.5 ns

  • Turn-on Time-Nom (ton):

    33 ns

  • VCEsat-Max:

    2.1 V

FGH50T65SQD-F155 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a heat sink is recommended. Ensure a low thermal resistance path from the device to the heat sink. Consult the onsemi application note for more details.
  • Use a shielded enclosure, keep sensitive components away from the FGH50T65SQD-F155, and ensure proper grounding and decoupling. Follow onsemi's EMC guidelines and relevant industry standards.
  • The FGH50T65SQD-F155 has a high reliability rating. Consult the onsemi reliability report for MTBF estimates, which are typically in the range of 10^6 to 10^7 hours.
  • The device is rated for operation up to 150°C. Derate the power handling and current capacity according to the onsemi datasheet and application notes to ensure reliable operation in high-temperature environments.
  • Follow the onsemi recommended soldering profile and assembly guidelines to prevent damage to the device. Use a soldering iron with a temperature range of 250°C to 260°C, and ensure a soldering time of less than 3 seconds.

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FGH50T65SQD-F155 Overview

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Part Image FGH50T65SQD_F155 onsemi

Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel, TO-247AB