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FJA13009TU - onsemi

Description: High Switching Speed; High-Voltage Capability

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FJA13009TU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P*
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FJA13009TU - onsemi  - 3D model - Transistor Outline, Vertical - TO-3P*
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FJA13009TU Details

  • Manufacturer Part Number:

    FJA13009TU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3P, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    12 A

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    6

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    130 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

FJA13009TU Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Monitor the device's drain-source voltage, drain current, and junction temperature. Implement over-voltage protection, over-current protection, and thermal shutdown mechanisms to prevent damage.
  • Use a dedicated gate driver IC or a high-current, low-impedance gate drive circuit. Ensure a fast rise and fall time (<10 ns) and a sufficient gate-source voltage (typically 10-15 V) to minimize switching losses.
  • Implement ESD protection diodes (e.g., 1.5KE6.8A) between the drain and source pins, and consider adding a TVS diode (e.g., SMAJ58A) between the drain and a fixed voltage rail.

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FJA13009TU Overview

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Part Image FJA13009TU Rochester Electronics LLC

12A, 400V, NPN, Si, POWER TRANSISTOR, LEAD FREE, TO-3P, 3 PIN

Part Image FJA13009TU Fairchild Semiconductor Corporation

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin