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FJB5555TM - onsemi

Description: Bipolar (BJT) Transistor NPN 400V 5A 1.6W Surface Mount TO-263 (D2PAK) , 800mA , -55°C to +150°C

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PCB Footprints
FJB5555TM - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F_2025-1.2
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FJB5555TM Details

  • Manufacturer Part Number:

    FJB5555TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    TO-263, D2PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    100 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FJB5555TM Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a proper heat sink design, ensure good airflow, and consider using a thermal interface material (TIM) to reduce thermal resistance. Monitor junction temperature (Tj) and adjust the design accordingly.
  • Use a shielded enclosure, keep high-frequency traces short, and use a common-mode choke or ferrite bead to filter out noise. Ensure proper grounding and decoupling to minimize radiation.
  • Use a low-dropout linear regulator or a switching regulator with a low quiescent current. Optimize the circuit design for low voltage and current, and consider using a power gating technique.
  • Use a 4-wire Kelvin connection for accurate voltage and current measurements. Ensure proper probe placement and consider using a high-impedance probe to minimize loading effects.

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FJB5555TM Overview

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