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FJP13009H2TU - onsemi

Description: High Switching Speed; High-Voltage Capability

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FJP13009H2TU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 3L_2023-1
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FJP13009H2TU - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 3L_2023-1
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FJP13009H2TU Details

  • Manufacturer Part Number:

    FJP13009H2TU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    12 A

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    6

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    100 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

FJP13009H2TU Frequently Asked Questions (FAQs)

  • A symmetrical layout with thermal vias and a large copper area for heat dissipation is recommended. The datasheet provides a recommended PCB layout, but it's essential to consult with a thermal expert or use thermal simulation tools to optimize the design.
  • Ensure good thermal contact between the module and the heat sink. Apply a thin layer of thermal interface material, and secure the module to the heat sink using screws or a suitable clamping mechanism. Monitor the junction temperature (Tj) and adjust the cooling system accordingly.
  • A gate drive voltage of 15-20 V and a current of 1-2 A is recommended for optimal switching performance. However, the specific requirements may vary depending on the application and switching frequency.
  • Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. For overvoltage protection, use a voltage clamp or a transient voltage suppressor (TVS) diode. Ensure the protection circuitry is designed to respond quickly to prevent damage to the IGBT module.
  • A dead time of 1-2 μs is recommended to prevent cross-conduction and ensure proper switching. The dead time affects the switching frequency, efficiency, and electromagnetic interference (EMI). A shorter dead time can improve efficiency but may increase EMI, while a longer dead time can reduce EMI but decrease efficiency.

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FJP13009H2TU Overview

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Part Image FJP13009H2TU Rochester Electronics LLC

12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN

Part Image FJP13009H2TU Fairchild Semiconductor Corporation

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin