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FOD8802A - onsemi

Description: Low Drive Current, IF; Excellent CTR linearity at high temperature; High isolation voltage regulated by safety agency, UL1577, 2500 VACRMS for 1 min.; Applicable to Infrared Ray reflow, 260ºC

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FOD8802A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751DZ
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FOD8802A - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751DZ
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FOD8802A Details

  • Manufacturer Part Number:

    FOD8802A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751DZ

  • HTS Code:

    8541.40.80.00

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2020-04-09

  • Manufacturer:

    onsemi

  • YTEOL:

    8

  • Coll-Emtr Bkdn Voltage-Min:

    75 V

  • Configuration:

    SEPARATE, 2 CHANNELS

  • Current Transfer Ratio-Min:

    35%

  • Current Transfer Ratio-Nom:

    138%

  • Dark Current-Max:

    100 nA

  • Forward Current-Max:

    0.02 A

  • Forward Voltage-Max:

    1.8 V

  • Isolation Voltage-Max:

    2500 V

  • JESD-609 Code:

    e4

  • Mounting Feature:

    SURFACE MOUNT

  • Number of Elements:

    2

  • On-State Current-Max:

    0.03 A

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Optoelectronic Device Type:

    TRANSISTOR OUTPUT OPTOCOUPLER

  • Packing Method:

    TUBE

  • Power Dissipation-Max:

    0.15 W

  • Response Time-Max:

    0.00002 s

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

FOD8802A Frequently Asked Questions (FAQs)

  • A good PCB layout for FOD8802A involves keeping the input and output traces short and separate, using a solid ground plane, and placing the device close to the photodiode. A 4-layer PCB with a dedicated ground plane is recommended. Additionally, the device should be placed in a way that minimizes electromagnetic interference (EMI) and radio-frequency interference (RFI).
  • The FOD8802A requires a single 5V supply voltage (VCC) and a bias voltage (VBIAS) for the photodiode. The recommended bias voltage is between 2.5V to 3.5V, with a typical value of 3V. The bias voltage should be decoupled with a 10nF capacitor to reduce noise. Additionally, the VCC and VBIAS pins should be bypassed with 10uF and 100nF capacitors, respectively, to ensure stable operation.
  • The FOD8802A is rated for operation over an ambient temperature range of -40°C to +85°C. However, the device's performance may degrade at higher temperatures, and the maximum junction temperature should not exceed 150°C.
  • The output signal of the FOD8802A is a high-impedance, high-frequency signal that requires proper termination and filtering to reduce noise. A 50Ω termination resistor should be used at the output, and a low-pass filter with a cutoff frequency of around 10MHz can be used to reduce high-frequency noise. Additionally, the output signal should be shielded from electromagnetic interference (EMI) and radio-frequency interference (RFI).
  • The FOD8802A is designed to work with a variety of photodiodes, but a silicon photodiode with a responsivity of around 0.5A/W is recommended. The photodiode should be connected in a photovoltaic mode, with the anode connected to the FOD8802A's PD pin and the cathode connected to the VBIAS pin. The photodiode should also be shielded from ambient light to reduce noise.

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