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FP15R12W1T4_B11 - Infineon

Description: Infineon FP15R12W1T4_B11, IGBT Module, 3 Phase, 28 A max, 1200 V, 23-Pin EASY1B

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PCB Footprints
FP15R12W1T4_B11 - Infineon PCB footprint - Other - Other - FP15R12W1T4_B11-5
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3D Models
FP15R12W1T4_B11 - Infineon  - 3D model - Other - FP15R12W1T4_B11-5
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FP15R12W1T4_B11 Details

  • Manufacturer Part Number:

    FP15R12W1T4_B11

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    22

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Moisture Sensitivity Level:

    1

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

FP15R12W1T4_B11 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance.
  • Infineon recommends using a heat sink with a thermal resistance of ≤ 1 K/W, and ensuring good thermal contact between the device and heat sink. Additionally, consider using a thermal interface material (TIM) to reduce thermal resistance.
  • According to Infineon's datasheet, the maximum allowed voltage derating for the FP15R12W1T4_B11 is 10% of the maximum rated voltage (VDS) at a junction temperature of 150°C.
  • The gate resistor value depends on the specific application requirements, such as switching frequency, gate drive voltage, and PCB layout. As a general guideline, Infineon recommends a gate resistor value between 1 Ω and 10 Ω. Consult the datasheet and application notes for more detailed guidance.
  • Infineon recommends soldering the FP15R12W1T4_B11 using a reflow soldering process with a peak temperature of 260°C and a dwell time of 20-30 seconds. Consult the datasheet and application notes for more detailed guidance on soldering conditions.

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FP15R12W1T4_B11 Overview

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