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FQA11N90-F109 - onsemi

Description: RoHS compliant; Low gate charge ( Typ. 72nC); 100% avalanche tested; Low Crss ( Typ. 30pF); 11.4A, 900V RDS(on) = 960mΩ(Max.) @VGS = 10 V, ID = 5.7A

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FQA11N90-F109 - onsemi - PCB symbol
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PCB Footprints
FQA11N90-F109 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O
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3D Models
FQA11N90-F109 - onsemi - 3D model - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O
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FQA11N90-F109 Details

  • Manufacturer Part Number:

    FQA11N90-F109

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-3PN 3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.4

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    11.4 A

  • Drain-source On Resistance-Max:

    0.96 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    45.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQA11N90-F109 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQA11N90-F109 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the FQA11N90-F109 is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the FQA11N90-F109 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses and ensure proper thermal management.
  • To protect the FQA11N90-F109 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.

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FQA11N90-F109 Overview

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