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FQA13N50CF - onsemi

Description: Obsolete - Power MOSFET, N-Channel, QFET, 500 V, 13.5 A, 480 mΩ, TO-3P

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PCB Footprints
FQA13N50CF - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FQA140N10-+
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3D Models
FQA13N50CF - onsemi  - 3D model - Transistor Outline, Vertical - FQA140N10-+
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FQA13N50CF Details

  • Manufacturer Part Number:

    FQA13N50CF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    860 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.48 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    218 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQA13N50CF Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FQA13N50CF is 150°C. However, it's recommended to operate the device at a temperature below 125°C for reliable operation.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) to fill any air gaps between the device and the heat sink. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the FQA13N50CF is between 10V and 15V. However, the device can tolerate up to 20V gate drive voltage. It's essential to ensure the gate drive voltage is within the recommended range to prevent device damage.
  • Yes, the FQA13N50CF is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is properly driven to minimize switching losses.
  • To protect the FQA13N50CF from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in the circuit. Additionally, consider using a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) to protect the device from voltage spikes and surges.

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FQA13N50CF Overview

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