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FQA140N10 - onsemi

Description: Low gate charge ( Typ. 220nC); 100% avalanche tested; 175°C maximum junction temperature rating; Low Crss ( Typ. 470pF); 140A, 100V RDS(on) = 10mΩ(Max.) @VGS = 10 V, ID = 70A

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FQA140N10 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FQA140N10-+
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FQA140N10 - onsemi  - 3D model - Transistor Outline, Vertical - FQA140N10-+
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FQA140N10 Details

  • Manufacturer Part Number:

    FQA140N10

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    140 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    550 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    560 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    1440 ns

  • Turn-on Time-Max (ton):

    2050 ns

FQA140N10 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQA140N10 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate driver, and ensure the gate-source voltage (Vgs) is within the recommended range of 2-5V. Additionally, ensure the drain-source voltage (Vds) is within the recommended range of 0-100V.
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the drain and source connections. Keep the gate driver close to the FQA140N10 and use a low-inductance path for the gate connection. Avoid using vias under the device, and use a solid ground plane to reduce electromagnetic interference (EMI).
  • To protect the FQA140N10 from overvoltage and overcurrent conditions, use a voltage regulator to regulate the drain-source voltage (Vds) and a current sense resistor to monitor the drain current (Id). Additionally, consider using a TVS diode or a zener diode to clamp the voltage and prevent overvoltage conditions.
  • To ensure proper thermal management, use a heat sink with a thermal resistance of less than 10°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of at least 5 W/m-K. Ensure good airflow around the heat sink, and consider using a fan to improve heat dissipation.

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