FQA14 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Low gate charge ( Typ. 220nC); 100% avalanche tested; 175°C maximum junction temperature rating; Low Crss ( Typ. 470pF); 140A, 100V RDS(on) = 10mΩ(Max.) @VGS = 10 V, ID = 70A Transistor Outline, Vertical FQA140N10 1 Download Model
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FQA14N30 Rochester Electronics LLC
1 15A, 300V, 0.29ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN FQA14N30 0 Build or Request
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FQA14N30 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 15A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQA14N30 0 Build or Request
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FQA140N10 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 140A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQA140N10 0 Build or Request
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