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FQA9N90C-F109 - onsemi

Description: Obsolete - Power MOSFET, N-Channel, QFET, 900V, 8.6A, 1.3Ω, TO-3P

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FQA9N90C-F109 - onsemi - PCB symbol
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PCB Footprints
FQA9N90C-F109 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PN_1
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3D Models
FQA9N90C-F109 - onsemi - 3D model - Transistor Outline, Vertical - TO-3PN_1
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FQA9N90C-F109 Details

  • Manufacturer Part Number:

    FQA9N90C-F109

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3PN 3L

  • Manufacturer Package Code:

    340BZ

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    900 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    280 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    370 ns

  • Turn-on Time-Max (ton):

    360 ns

FQA9N90C-F109 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for FQA9N90C-F109 is a standard TO-220 package with a minimum pad size of 5.5mm x 4.5mm. Ensure proper thermal management by using a thermal pad and a heat sink if necessary.
  • To ensure reliability, follow the recommended operating temperature range (TJ) of -55°C to 150°C. Implement proper thermal management, and consider derating the device's power dissipation at higher temperatures.
  • FQA9N90C-F109 has an internal ESD protection diode. However, it's still recommended to follow standard ESD handling procedures during assembly and storage to prevent damage. Use an ESD wrist strap or mat, and store the devices in anti-static packaging.
  • While FQA9N90C-F109 is primarily designed for low-frequency applications, it can be used in high-frequency switching applications with proper design considerations. Ensure the device is operated within its safe operating area (SOA) and consider the effects of switching losses and parasitic inductance.
  • The gate resistor value depends on the specific application and switching frequency. A general guideline is to use a value between 10Ω to 100Ω. However, it's recommended to consult the application note or a qualified engineer for optimal gate resistor selection.

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FQA9N90C-F109 Overview

Use the download button to access the FQA9N90C-F109 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQA9N, or try a keyword search, such as Power Field-Effect Transistors

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FQA9N90C-F109 Alternates

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Part Image FQA9N90C Rochester Electronics LLC

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