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FQB25N33TM-F085 - onsemi

Description: Obsolete - N-Channel UltraFET 250V, 25.5A, 131mΩ

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PCB Footprints
FQB25N33TM-F085 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F_2021
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FQB25N33TM-F085 Details

  • Manufacturer Part Number:

    FQB25N33TM-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-263 2L (D2PAK)

  • Package Description:

    D2PAK-3

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    370 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    330 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.23 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    255 ns

  • Turn-on Time-Max (ton):

    195 ns

FQB25N33TM-F085 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature (Tj) range of -55°C to 150°C.
  • The FQB25N33TM-F085 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. The device can withstand human body model (HBM) ESD pulses up to ±2kV and machine model (MM) ESD pulses up to ±200V.
  • Yes, the FQB25N33TM-F085 is suitable for high-reliability and automotive applications. It's manufactured using a robust process, and onsemi provides a range of reliability and quality data, including AEC-Q101 qualification, to support its use in these applications.
  • The optimal gate resistor value depends on the specific application requirements, including the switching frequency, voltage, and current. A general guideline is to use a gate resistor value between 10Ω and 100Ω. However, it's recommended to consult the application note or seek guidance from onsemi's technical support team for a more accurate calculation.

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FQB25N33TM-F085 Overview

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Part Image FQB25N33TM_F085 onsemi

330V N-Channel QFET® MOSFET, TO-263 2L (D2PAK), 6400-TAPE REEL