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FQD6N25TM - onsemi

Description: RoHS compliant; 4.4A, 250V, RDS(on) = 1.0Ω(Max.) @VGS = 10 V, ID = 2.2A; Low Crss ( Typ. 7.5pF); Low gate charge ( Typ. 6.6 nC); 100% avalanche tested

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PCB Footprints
FQD6N25TM - onsemi PCB footprint - Other - Other - FJD5304DTF-1
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FQD6N25TM Details

  • Manufacturer Part Number:

    FQD6N25TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    31 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    75 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    4.4 A

  • Drain-source On Resistance-Max:

    1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.5 W

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    17.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    95 ns

  • Turn-on Time-Max (ton):

    165 ns

FQD6N25TM Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQD6N25TM can withstand is 150°C.
  • To ensure the FQD6N25TM is properly biased, make sure to provide a stable gate-source voltage (Vgs) between 2V to 5V, and a drain-source voltage (Vds) within the recommended operating range.
  • For optimal thermal performance, use a multi-layer PCB with a thermal relief pattern under the device, and ensure good thermal conductivity between the device and the heat sink. Also, keep the PCB traces as short and wide as possible to minimize parasitic inductance.
  • Yes, the FQD6N25TM is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI.
  • Use a voltage regulator or a zener diode to clamp the voltage, and consider adding a current sense resistor and a fuse or a current limiter to protect against overcurrent conditions.

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FQD6N25TM Overview

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