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FQP13N06L - onsemi

Description: Low Crss ( Typ. 17pF); 175°C maximum junction temperature rating; 13.6A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 6.8A; Low gate charge ( Typ. 4.8nC); 100% avalanche tested

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PCB Footprints
FQP13N06L - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FDP2614
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3D Models
FQP13N06L - onsemi  - 3D model - Transistor Outline, Vertical - FDP2614
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FQP13N06L Details

  • Manufacturer Part Number:

    FQP13N06L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    13.6 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    23 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    TUBE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    54.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    140 ns

  • Turn-on Time-Max (ton):

    215 ns

FQP13N06L Frequently Asked Questions (FAQs)

  • The maximum SOA for the FQP13N06L is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be around 10A and 30V.
  • To ensure the FQP13N06L is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate resistor value of around 1kΩ to 10kΩ is recommended.
  • The maximum allowed Vds for the FQP13N06L is 60V, as specified in the datasheet. However, it's recommended to derate the voltage to around 50V to ensure reliable operation and minimize the risk of avalanche breakdown.
  • Thermal management is crucial for the FQP13N06L. Ensure good heat sinking, use a thermal interface material, and consider using a heat sink with a thermal resistance of around 10°C/W or lower. Monitor the junction temperature and adjust the design accordingly.
  • Yes, the FQP13N06L can be used in high-frequency switching applications, but be aware of the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive is sufficient to minimize switching losses.

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