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FQP13N50 - onsemi

Description: 100% avalanche tested; Low gate charge ( Typ. 45nC); 12.5A, 500V, RDS(on) = 430mΩ(Max.) @VGS = 10 V, ID = 6.25A; Low Crss ( Typ. 25pF)

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PCB Footprints
FQP13N50 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220, Molded, 3-Lead, jedec Variation AB
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3D Models
FQP13N50 - onsemi  - 3D model - Transistor Outline, Vertical - TO220, Molded, 3-Lead, jedec Variation AB
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FQP13N50 Details

  • Manufacturer Part Number:

    FQP13N50

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    810 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    12.5 A

  • Drain-source On Resistance-Max:

    0.43 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    220 ns

  • Turn-on Time-Max (ton):

    450 ns

FQP13N50 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQP13N50 is -55°C to 150°C.
  • To ensure proper biasing, the FQP13N50 requires a gate-source voltage (Vgs) between 2V and 4V, and a drain-source voltage (Vds) between 10V and 500V.
  • The recommended gate resistor value for the FQP13N50 is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • Yes, the FQP13N50 is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
  • To protect the FQP13N50, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse to prevent overcurrent conditions.

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FQP13N50 Overview

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