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FQP30N06 - onsemi

Description: 100% avalanche tested; Low Crss ( Typ. 40pF); Low gate charge ( Typ. 19nC); 175°C maximum junction temperature rating; 30A, 60V, RDS(on) = 40mΩ(Max.) @VGS = 10 V, ID = 15A

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FQP30N06 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FQP30N06
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FQP30N06 - onsemi  - 3D model - Transistor Outline, Vertical - FQP30N06
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FQP30N06 Details

  • Manufacturer Part Number:

    FQP30N06

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks, 5 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    280 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    79 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP30N06 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FQP30N06 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and voltage ratings. For the FQP30N06, the maximum Tj is 150°C, and the maximum voltage rating is 60V. Therefore, the SOA would be limited to operating conditions that do not exceed these ratings.
  • To ensure the FQP30N06 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate resistor (Rg) of around 1-10 ohms can be used to slow down the gate voltage rise time and prevent oscillations. Additionally, a gate-source voltage of 12-15V can be used to ensure the device is fully enhanced.
  • The maximum current rating for the FQP30N06 is 30A, as indicated in the part number. However, this rating is based on a specific set of operating conditions, including a maximum junction temperature (Tj) of 150°C and a maximum voltage rating of 60V. The actual current rating may be lower depending on the specific application and operating conditions.
  • To protect the FQP30N06 from overvoltage and overcurrent, a combination of voltage and current limiting techniques can be used. A voltage clamp or a zener diode can be used to limit the voltage across the device, while a current sense resistor and a comparator can be used to detect overcurrent conditions. Additionally, a thermal protection circuit can be used to detect overheating and shut down the device if necessary.
  • The typical switching frequency for the FQP30N06 depends on the specific application and operating conditions. However, as a general guideline, the FQP30N06 can be used in switching applications up to 100 kHz. At higher frequencies, the device's switching losses and parasitic capacitances become more significant, and the device may not be suitable for high-frequency switching applications.

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