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FQP3P20 - onsemi

Description: -2.8A, -200V, RDS(on) = 2.7Ω(Max.) @VGS = -10 V, ID = -1.4A; Low gate charge ( Typ. 6nC); 100% avalanche tested; Low Crss ( Typ. 7.5pF)

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Symbol
FQP3P20 - onsemi - PCB symbol
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PCB Footprints
FQP3P20 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FQP3P20
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3D Models
FQP3P20 - onsemi - 3D model - Transistor Outline, Vertical - FQP3P20
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FQP3P20 Details

  • Manufacturer Part Number:

    FQP3P20

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    2.8 A

  • Drain-source On Resistance-Max:

    2.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    11.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP3P20 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQP3P20 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
  • To ensure proper biasing, make sure to provide a stable voltage supply within the recommended range (typically 10-20V), and ensure the gate-source voltage (Vgs) is within the recommended range (typically 2-4V) for the desired operating conditions.
  • For optimal thermal management, use a PCB with a thermal pad and ensure good thermal conductivity between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance.
  • Yes, the FQP3P20 is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI.
  • Use a voltage regulator or overvoltage protection circuit to prevent voltage exceeding the maximum rating. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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FQP3P20 Overview

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FQP3P20 Alternates

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Part Image FQP3P20 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.8A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB