Part Image

FQP3P50 - onsemi

Description: Low gate charge ( Typ. 18nC); 100% avalanche tested; -2.7A, -500V, RDS(on) = 4.9Ω(Max.) @VGS = -10 V, ID = -1.35A; Low Crss ( Typ. 9.5pF)

Download FQP3P50 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQP3P50 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FQP3P50
click to zoom
3D Models
FQP3P50 - onsemi  - 3D model - Transistor Outline, Vertical - FQP3P50
click to zoom

FQP3P50 Details

  • Manufacturer Part Number:

    FQP3P50

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    4.9 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    85 W

  • Pulsed Drain Current-Max (IDM):

    10.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP3P50 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQP3P50 is -55°C to 150°C.
  • To ensure proper biasing, the FQP3P50 requires a minimum gate-source voltage of 4V and a maximum gate-source voltage of 10V. Additionally, the drain-source voltage should be limited to 500V.
  • The recommended gate resistor value for the FQP3P50 is between 1kΩ to 10kΩ, depending on the specific application and switching frequency.
  • Yes, the FQP3P50 is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the FQP3P50 from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode, as well as a current sense resistor and a fuse or a current limiter.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQP3P50 Overview

Use the download button to access the FQP3P50 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQP3P, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQP3P50

Showing 0 results

FQP3P50 Alternates

Showing results

Image Part Number Model
Part Image FQP3P50 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.7A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB