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FQP4N90C - onsemi

Description: Low Crss ( Typ. 5.6pF); 100% avalanche tested; Low gate charge ( Typ. 17nC); 4A, 900V, RDS(on) = 4.2Ω(Max.) @VGS = 10 V, ID = 2A

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FQP4N90C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT_
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FQP4N90C - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT_
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FQP4N90C Details

  • Manufacturer Part Number:

    FQP4N90C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    570 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    4.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP4N90C Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FQP4N90C is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal characteristics and maximum ratings. A general rule of thumb is to limit the device's power dissipation to 50-70% of its maximum rating to ensure reliable operation.
  • To ensure the FQP4N90C is properly biased, follow the recommended operating conditions outlined in the datasheet. This includes setting the gate-source voltage (Vgs) within the recommended range (typically -2 to 4 V) and ensuring the drain-source voltage (Vds) is within the maximum rating (600 V). Additionally, ensure the device is properly heatsinked to maintain a safe junction temperature.
  • The recommended gate resistor value for the FQP4N90C depends on the specific application and switching frequency. A general guideline is to use a gate resistor in the range of 10-100 ohms to ensure proper switching and minimize ringing. However, the optimal value may need to be experimentally determined based on the specific circuit and operating conditions.
  • Yes, the FQP4N90C can be used in high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure the circuit is properly designed to minimize ringing and electromagnetic interference (EMI). Additionally, the device's thermal performance and power dissipation should be carefully evaluated to ensure reliable operation.
  • To protect the FQP4N90C from electrostatic discharge (ESD), follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and packaging materials. Additionally, ensure the device is properly grounded during handling and assembly, and consider using ESD protection devices or circuits in the final application.

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FQP4N90C Overview

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Part Image FQP4N90C Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB