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FQP8N60C - onsemi

Description: Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220

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PCB Footprints
FQP8N60C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220, MOULDED, 3 LEAD, NON-JEDEC,Variation AB (dual Gauge)
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3D Models
FQP8N60C - onsemi  - 3D model - Transistor Outline, Vertical - TO-220, MOULDED, 3 LEAD, NON-JEDEC,Variation AB (dual Gauge)
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FQP8N60C
  • Part Number FQP8N60C
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO-220, MOULDED, 3 LEAD, NON-JEDEC,Variation AB (dual Gauge)
  • Released Date Sep 15, 2025
  • Last Modified Date Sep 15, 2025 9:03 AM UTC
  • Pinout / Pin List Click Here (Member Only)

FQP8N60C Details

  • Manufacturer Part Number:

    FQP8N60C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    230 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    147 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    310 ns

  • Turn-on Time-Max (ton):

    175 ns

FQP8N60C Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FQP8N60C is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's operation to a maximum junction temperature of 150°C and a maximum voltage of 600V.
  • To ensure proper cooling, consider the device's thermal resistance (RθJA) and maximum junction temperature (Tj). Use a heat sink with a thermal resistance that is less than or equal to the device's RθJA. Also, ensure good thermal contact between the device and heat sink, and consider using thermal interface materials if necessary.
  • The recommended gate drive voltage for the FQP8N60C is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the FQP8N60C is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of providing a fast and stable voltage signal.
  • To protect the FQP8N60C from overvoltage and overcurrent, consider using a voltage clamp or surge protector to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or circuit breaker to detect and respond to overcurrent conditions.

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