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FQPF65N06 - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, QFET, 800 V, 5.5 A, 2.5 Ω, TO-220F

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PCB Footprints
FQPF65N06 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPACK CASE 221AT ISSUE A
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3D Models
FQPF65N06 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPACK CASE 221AT ISSUE A
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FQPF65N06 Details

  • Manufacturer Part Number:

    FQPF65N06

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    645 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    56 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF65N06 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FQPF65N06 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, make sure to provide a gate-source voltage (Vgs) between 4V and 10V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink. A thermal interface material (TIM) can be used to improve heat transfer.
  • To protect the FQPF65N06 from ESD, use an ESD wrist strap or mat when handling the device. Ensure the PCB has ESD protection components, such as TVS diodes or ESD protection arrays, and follow proper handling and storage procedures.
  • The recommended gate resistor value for the FQPF65N06 is between 10Ω and 100Ω. A higher value can help reduce oscillations, but may increase switching times. A lower value can improve switching times, but may increase oscillations.

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FQPF65N06 Overview

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