Part Image

FQU20N06LTU - onsemi

Description: 100% avalanche tested; Low Crss ( Typ. 35pF); Low gate charge ( Typ. 9.5nC); 17.2A, 60V, RDS(on) = 42mΩ(Max.) @VGS = 10 V, ID = 8.6A

Download FQU20N06LTU Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQU20N06LTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - N-Channel 60 V 17.2A (Tc) 2.5W (Ta), 38W (Tc) Through Hole IPAK-
click to zoom
3D Models
FQU20N06LTU - onsemi  - 3D model - Transistor Outline, Vertical - N-Channel 60 V 17.2A (Tc) 2.5W (Ta), 38W (Tc) Through Hole IPAK-
click to zoom
  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FQU20N06LTU
  • Part Number FQU20N06LTU
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category Transistor
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - N-Channel 60 V 17.2A (Tc) 2.5W (Ta), 38W (Tc) Through Hole IPAK-
  • Released Date Sep 7, 2017
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FQU20N06LTU Details

  • Manufacturer Part Number:

    FQU20N06LTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Package Description:

    IPAK-3

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    17.2 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    68.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQU20N06LTU Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQU20N06LTU is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 4V and 10V, and the drain-source voltage (Vds) should be between 10V and 60V.
  • The recommended gate resistor value for the FQU20N06LTU is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • To protect the FQU20N06LTU from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the PCB is designed with ESD protection in mind.
  • The maximum current rating for the FQU20N06LTU is 20A, but this can be affected by the operating temperature and other factors.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQU20N06LTU Overview

Use the download button to access the FQU20N06LTU schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQU20, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQU20N06LTU

Showing 0 results

FQU20N06LTU Alternates

Showing results

Image Part Number Model
Part Image FQU20N06LTU Rochester Electronics LLC

17.2A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3

Part Image FQU20N06LTU Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251