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FS100R07N2E4_B11 - Infineon

Description: Infineon FS100R07N2E4_B11, IGBT Module, 3 Phase, 100 A max, 650 V, 25-Pin Econo2

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FS100R07N2E4_B11 - Infineon PCB footprint - Other - Other - FS100R07N2E4_B11-1
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FS100R07N2E4_B11 - Infineon  - 3D model - Other - FS100R07N2E4_B11-1
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FS100R07N2E4_B11 Details

  • Manufacturer Part Number:

    FS100R07N2E4_B11

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    25

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • JESD-30 Code:

    R-XUFM-X13

  • Number of Elements:

    6

  • Number of Terminals:

    13

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    370 ns

  • Turn-on Time-Nom (ton):

    100 ns

FS100R07N2E4_B11 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • The choice of gate driver depends on the specific application requirements, such as switching frequency, voltage, and current. Infineon recommends using their EiceDRIVER series of gate drivers, which are optimized for their MOSFETs. The EiceDRIVER 1EDC20I12BA, for example, is a suitable option for the FS100R07N2E4_B11.
  • While the datasheet specifies a maximum drain-source voltage of 100V, Infineon recommends limiting voltage overshoots to 120V or less to ensure reliable operation and prevent damage to the MOSFET. This can be achieved through proper PCB design, gate driver selection, and snubber circuit implementation.
  • To ensure SOA compliance, designers should consider the MOSFET's voltage, current, and temperature ratings, as well as the application's specific requirements. Infineon provides SOA curves in their datasheets, and designers can use these curves to verify that their design operates within the safe region. Additionally, Infineon's MOSFET models can be used in simulation tools like SPICE or PLECS to simulate the device's behavior and ensure SOA compliance.
  • Infineon recommends storing the FS100R07N2E4_B11 in a dry, cool place, away from direct sunlight and moisture. The devices should be handled with anti-static precautions, such as wrist straps or anti-static bags, to prevent electrostatic discharge (ESD) damage. Additionally, the devices should be soldered using a controlled soldering process to prevent thermal damage.

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FS100R07N2E4_B11 Overview

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