BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X35
Number of Elements:
6
Number of Terminals:
35
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
480 W
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
610 ns
Turn-on Time-Nom (ton):
340 ns
VCEsat-Max:
2.15 V
FS100R12KE3 Frequently Asked Questions (FAQs)
The maximum allowed case temperature for the FS100R12KE3 is 150°C, as specified in the datasheet.
To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, ensuring good airflow, and avoiding overheating.
The recommended gate resistor value for the FS100R12KE3 is typically in the range of 10-20 ohms, depending on the specific application and switching frequency.
Yes, the FS100R12KE3 can be used in a parallel configuration to increase power handling, but it's essential to ensure proper synchronization and current sharing between the devices.
To protect the FS100R12KE3, it's recommended to use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, as well as a fuse or circuit breaker to prevent damage from excessive currents.
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FS100R12KE3 Overview
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