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FS100R12N2T4P - Infineon

Description: IGBT Modules LOW POWER ECONO VCES = 1200V, IC nom = 100A / ICRM = 200A, TrenchIGBT4

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PCB Footprints
FS100R12N2T4P - Infineon PCB footprint - Other - Other - FS100R12N2T4P-4
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3D Models
FS100R12N2T4P - Infineon  - 3D model - Other - FS100R12N2T4P-4
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FS100R12N2T4P Details

  • Manufacturer Part Number:

    FS100R12N2T4P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    6.45 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X25

  • Number of Elements:

    6

  • Number of Terminals:

    25

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    IEC-61140; UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    345 ns

  • Turn-on Time-Nom (ton):

    150 ns

  • VCEsat-Max:

    2.1 V

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FS100R12N2T4P Overview

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