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FUS1ME - Diodes Incorporated

Description: Rectifiers Ultrafast GPP Rectifier DO-219AA T&R 10K

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FUS1ME - Diodes Incorporated - PCB symbol
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PCB Footprints
FUS1ME - Diodes Incorporated PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - F1A
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FUS1ME - Diodes Incorporated - 3D model - Small Outline Diode Flat Lead - F1A
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FUS1ME Details

  • Manufacturer Part Number:

    FUS1ME

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    1000 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    DO-219AA

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    30 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    1000 V

  • Reverse Current-Max:

    5 µA

  • Reverse Recovery Time-Max:

    0.075 µs

  • Reverse Test Voltage:

    1000 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

FUS1ME Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a compact PCB layout with short traces and minimal vias to reduce parasitic inductance and capacitance. A 4-layer PCB with a solid ground plane is recommended. Additionally, the FUS1ME should be placed close to the power source and the output capacitors should be placed close to the FUS1ME.
  • The FUS1ME has a thermal pad on the bottom of the package, which should be connected to a thermal plane on the PCB. A thermal interface material (TIM) can be used to improve heat transfer between the FUS1ME and the thermal plane. Additionally, the PCB should be designed to allow for good airflow around the FUS1ME.
  • The maximum allowed voltage on the EN pin is 6V. Exceeding this voltage may damage the device. It is recommended to use a voltage divider or a buffer circuit to ensure the EN pin voltage does not exceed 6V.
  • The FUS1ME is rated for operation up to 125°C. However, the device's performance and reliability may degrade at high temperatures. It is recommended to derate the device's output current and voltage at high temperatures to ensure reliable operation.
  • Diodes Incorporated recommends using a oscilloscope to monitor the input and output voltages, as well as the EN pin voltage. Additionally, checking the PCB layout and thermal design can help identify issues related to parasitic inductance and capacitance, or thermal performance.

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FUS1ME Overview

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