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FZ600R65KE3 - Infineon

Description: IGBT Modules IGBT Module 600A 6500V

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FZ600R65KE3 - Infineon  - 3D model
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FZ600R65KE3 Details

  • Manufacturer Part Number:

    FZ600R65KE3

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    9

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector-Emitter Voltage-Max:

    6500 V

  • Configuration:

    COMPLEX

  • JESD-30 Code:

    R-XUFM-X9

  • Number of Elements:

    3

  • Number of Terminals:

    9

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    8100 ns

  • Turn-on Time-Nom (ton):

    1200 ns

FZ600R65KE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FZ600R65KE3 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
  • The recommended gate drive voltage for the FZ600R65KE3 is between 10V and 15V, with a maximum voltage of 20V.
  • To protect the FZ600R65KE3, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor.
  • The maximum allowable power dissipation for the FZ600R65KE3 is 300W, but this value can be affected by the operating temperature, PCB design, and thermal management.

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FZ600R65KE3 Overview

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Part Image FZ600R65KE3NOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 6500V V(BR)CES, N-Channel