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FZT493TA - Diodes Incorporated

Description: Trans GP BJT NPN 100V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R

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PCB Footprints
FZT493TA - Diodes Incorporated PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - AP02001 SOT223
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3D Models
FZT493TA - Diodes Incorporated  - 3D model - SOT223 (3-Pin) - AP02001 SOT223
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FZT493TA Details

  • Manufacturer Part Number:

    FZT493TA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    150 MHz

FZT493TA Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the FZT493TA is 2.7V to 5.5V, as specified in the datasheet. However, it's essential to note that the device can tolerate a maximum voltage of 6V for short durations, but prolonged exposure may affect its reliability.
  • To ensure proper biasing, follow the recommended voltage and current conditions outlined in the datasheet. Typically, a voltage supply of 3.3V or 5V is used, and the device should be biased with a current limit resistor (R_LIM) to prevent overcurrent conditions.
  • The maximum current rating for the FZT493TA is 500mA. To calculate power dissipation, use the formula: P_DISS = I_OUT * V_OUT, where I_OUT is the output current and V_OUT is the output voltage. Ensure the calculated power dissipation does not exceed the maximum rating of 1.25W.
  • Proper thermal management is crucial for the FZT493TA. Ensure good airflow around the device, and consider using a heat sink if necessary. The maximum junction temperature (T_J) is 150°C. Calculate the junction temperature using the formula: T_J = T_A + (P_DISS * θ_JA), where T_A is the ambient temperature and θ_JA is the junction-to-ambient thermal resistance.
  • The FZT493TA has built-in ESD protection, but it's still essential to follow proper handling and assembly procedures to prevent damage. For latch-up prevention, ensure the device is properly biased, and avoid voltage spikes or transients that may trigger latch-up conditions.

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FZT493TA Overview

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Part Image FZT493TA Zetex / Diodes Inc

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Part Image UFZT493TA Zetex / Diodes Inc

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

Part Image UFZT493TC Zetex / Diodes Inc

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Part Image FZT493 Diodes Incorporated

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

Part Image UFZT493TC Diodes Incorporated

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

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