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FZT655TA - Diodes Incorporated

Description: Diodes Inc FZT655TA NPN Bipolar Transistor, 1 A, 150 V SOT-223

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Symbol
FZT655TA - Diodes Incorporated - PCB symbol
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PCB Footprints
FZT655TA - Diodes Incorporated PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT223
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3D Models
FZT655TA - Diodes Incorporated - 3D model - SOT223 (3-Pin) - SOT223
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FZT655TA Details

  • Manufacturer Part Number:

    FZT655TA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    150 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

FZT655TA Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the FZT655TA is a standard SOT23 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (pin 1) to a voltage source through a resistor (e.g., 1kΩ) and a capacitor (e.g., 100nF) in series. This helps to filter out noise and ensure a stable input voltage.
  • The maximum power dissipation for the FZT655TA is 250mW. Ensure that the device is properly heat-sinked and operated within the recommended temperature range to avoid overheating.
  • Yes, the FZT655TA is suitable for high-frequency applications up to 100MHz. However, ensure that the PCB layout is optimized for high-frequency operation, and consider using a decoupling capacitor (e.g., 100nF) close to the device to reduce noise.
  • To ensure ESD protection, handle the FZT655TA by the body or use an anti-static wrist strap. Store the devices in anti-static packaging, and avoid touching the pins or leads during handling.

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FZT655TA Overview

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FZT655TA Alternates

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Part Image FZT655 Diodes Incorporated

Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin