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G2R1000MT17J - GeneSiC Semiconductor

Description: MOSFET 1700V 1000mO TO-263-7 G2R SiC MOSFET

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G2R1000MT17J - GeneSiC Semiconductor PCB footprint - Other - Other - TO-263-7_1
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G2R1000MT17J Details

  • Manufacturer Part Number:

    G2R1000MT17J

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1700 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    44 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

G2R1000MT17J Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a large copper area for heat dissipation is recommended. The device should be placed near a thermal pad or a heat sink for optimal thermal performance.
  • Ensure proper heat sinking, use a thermally conductive material for the PCB, and follow the recommended thermal design guidelines. Also, consider derating the device's current rating at high temperatures to prevent thermal runaway.
  • The device has an internal ESD protection diode, but it's recommended to add external ESD protection devices, such as TVS diodes, to protect the device from electrostatic discharge during handling and assembly.
  • Yes, but it's crucial to ensure that the devices are properly matched and that the current sharing is balanced. A common gate driver and a current sense resistor can help achieve this. However, the maximum current rating of each device should not be exceeded.
  • A gate drive voltage of 10-15V and a current of 1-2A is recommended. The gate drive circuit should be designed to provide a fast rise and fall time to minimize switching losses.

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