G2R1000MT33J - GeneSiC Semiconductor

G2R1000MT33J Details

• Manufacturer Part Number:

  G2R1000MT33J

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Transferred

• Country Of Origin:

  USA

• ECCN Code:

  EAR99

• HTS Code:

  8541.10.00.80

• Manufacturer:

  GeneSic Semiconductor Inc

• YTEOL:

  7

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  3300 V

• Drain Current-Max (ID):

  4 A

• Drain-source On Resistance-Max:

  1.2 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  2.4 pF

• JEDEC-95 Code:

  TO-263

• JESD-30 Code:

  R-PSSO-G7

• Number of Elements:

  1

• Number of Terminals:

  7

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  74 W

• Pulsed Drain Current-Max (IDM):

  8 A

• Reference Standard:

  IEC-60747-8-4

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON CARBIDE