Part Image

G2R120MT33J - GeneSiC Semiconductor

Description: N-Channel 3300 V 35A Surface Mount TO-263-7

Download G2R120MT33J Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
G2R120MT33J - GeneSiC Semiconductor PCB footprint - Other - Other - G2R120MT33J-2
click to zoom

G2R120MT33J Details

  • Manufacturer Part Number:

    G2R120MT33J

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

  • Avalanche Energy Rating (Eas):

    955 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    3300 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.156 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.2 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    366 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

G2R120MT33J Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the G2R120MT33J is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) to fill any air gaps between the device and the heat sink. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the G2R120MT33J is between 10V and 15V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements, as excessive gate voltage can damage the device.
  • Yes, the G2R120MT33J is suitable for high-frequency switching applications due to its low switching losses and fast switching times. However, it's crucial to consider the device's maximum switching frequency, which is typically specified in the datasheet, and ensure that the device is properly cooled to prevent overheating.
  • To protect the G2R120MT33J from overvoltage and overcurrent, it's recommended to use a voltage clamp or a surge protector to limit the voltage across the device. Additionally, consider using a current sense resistor and a current limiter to prevent excessive current from flowing through the device.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

G2R120MT33J Overview

Use the download button to access the G2R120MT33J schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like G2R12, or try a keyword search, such as Power Field-Effect Transistors

Parts related to G2R120MT33J

Showing 0 results