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G3R12MT12K - GeneSiC Semiconductor

Description: MOSFET 1200V 12mO TO-247-4 G3R SiC MOSFET

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G3R12MT12K - GeneSiC Semiconductor - PCB symbol
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G3R12MT12K - GeneSiC Semiconductor PCB footprint - Other - Other - G3R12MT12K-2
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G3R12MT12K - GeneSiC Semiconductor - 3D model - Other - G3R12MT12K-2
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G3R12MT12K Details

  • Manufacturer Part Number:

    G3R12MT12K

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

  • Avalanche Energy Rating (Eas):

    1204 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    155 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22.8 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    567 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

G3R12MT12K Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • Ensure proper heat sinking, use a thermally conductive material for the PCB, and follow the recommended PCB layout guidelines. Also, consider using a thermal interface material (TIM) between the device and the heat sink.
  • The maximum allowed voltage transient on the gate is ±20V, but it's recommended to limit it to ±10V to ensure reliable operation and prevent damage to the device.
  • Yes, but it's crucial to ensure that the devices are matched in terms of threshold voltage and on-resistance. Also, a common gate drive and a shared heat sink are recommended to ensure synchronized switching and even heat distribution.
  • Use a fuse or a current limiter in series with the device, and consider adding a voltage clamp or a TVS diode to protect against overvoltage. Also, ensure that the device is operated within its recommended operating conditions.

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G3R12MT12K Overview

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