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G3R30MT12K - GeneSiC Semiconductor

Description: Silicon Carbide MOSFET N-Channel Enhancement Mode

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PCB Footprints
G3R30MT12K - GeneSiC Semiconductor PCB footprint - Other - Other - TO-247-4_2022
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3D Models
G3R30MT12K - GeneSiC Semiconductor  - 3D model - Other - TO-247-4_2022
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G3R30MT12K Details

  • Manufacturer Part Number:

    G3R30MT12K

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

  • Avalanche Energy Rating (Eas):

    498 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9.4 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    281 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

G3R30MT12K Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan. Monitor junction temperature and adjust the system design accordingly.
  • A gate driver with a high current capability (>1A) and a low output impedance (<10 ohms) is recommended. Consider using a dedicated gate driver IC or a discrete circuit with a low-inductance layout.
  • Use a shielded enclosure, keep high-frequency signals away from the device, and implement a common-mode choke or ferrite bead on the power lines. Ensure a low-inductance layout and use a snubber circuit if necessary.
  • The high dv/dt rating requires careful consideration of the system's layout, cabling, and EMI filtering. Ensure a low-inductance layout, use shielded cables, and implement a common-mode filter to minimize EMI.

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