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G3R350MT12D - GeneSiC Semiconductor

Description: MOSFET 1200V 350mO TO-247-3 G3R SiC MOSFET

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G3R350MT12D - GeneSiC Semiconductor - PCB symbol
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G3R350MT12D - GeneSiC Semiconductor PCB footprint - Other - Other - G3R350MT12D-2
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G3R350MT12D - GeneSiC Semiconductor - 3D model - Other - G3R350MT12D-2
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G3R350MT12D Details

  • Manufacturer Part Number:

    G3R350MT12D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    43 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.455 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.8 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    63 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Reference Standard:

    IEC-607478-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

G3R350MT12D Frequently Asked Questions (FAQs)

  • GeneSic recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer for heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermally conductive material for the heat sink, and maintain a maximum junction temperature (Tj) of 150°C. Also, follow the recommended derating curves for current and voltage.
  • The G3R350MT12D can withstand voltage transients up to 400 V for a duration of 10 μs, but it's recommended to use a TVS diode or a voltage clamp to protect the device from voltage spikes.
  • Yes, but it's crucial to ensure that the devices are matched in terms of Vf and Rds(on) to prevent uneven current sharing. Also, use a common gate driver and ensure that the gate-source voltage is within the recommended range.
  • GeneSic recommends a gate drive voltage of 10-15 V and a current of 1-2 A to ensure fast switching times and low power losses.

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G3R350MT12D Overview

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