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G3R350MT12J - GeneSiC Semiconductor

Description: MOSFET 1200V 350mO TO-263-7 G3R SiC MOSFET

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G3R350MT12J - GeneSiC Semiconductor PCB footprint - Other - Other - G3R350MT12J-2
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G3R350MT12J Details

  • Manufacturer Part Number:

    G3R350MT12J

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

  • Avalanche Energy Rating (Eas):

    43 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.395 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.8 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    64 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Reference Standard:

    IEC-607478-4

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

G3R350MT12J Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • Ensure proper heat sinking, use a thermally conductive material for the PCB, and follow the recommended thermal design guidelines. Also, consider derating the device's current rating at high temperatures.
  • A gate drive voltage of 10-15V and a current of 1-2A is recommended for optimal switching performance. However, the exact values may vary depending on the specific application and PCB layout.
  • Use a TVS diode or a zener diode for overvoltage protection, and a fuse or a current sense resistor for overcurrent protection. Also, consider using a gate drive circuit with built-in overcurrent protection.
  • A dead time of 100-200ns is recommended to ensure proper switching and to prevent shoot-through currents. However, the exact value may vary depending on the specific application and PCB layout.

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