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G3R45MT17D - GeneSiC Semiconductor

Description: 1700V 45mO TO-247-3 G3R SiC MOSFET

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PCB Footprints
G3R45MT17D - GeneSiC Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3
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3D Models
G3R45MT17D - GeneSiC Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247-3
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G3R45MT17D Details

  • Manufacturer Part Number:

    G3R45MT17D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

G3R45MT17D Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan. Monitor junction temperature (TJ) and adjust the system design accordingly.
  • A gate driver with a high current capability (>1A) and a low output impedance is recommended. Consider using a dedicated gate driver IC or a discrete circuit with a low-inductance layout.
  • Use a shielded enclosure, keep high-frequency signals away from the device, and implement a common-mode choke or ferrite bead on the power lines. Ensure a low-inductance layout and use a snubber circuit if necessary.
  • Monitor the drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and junction temperature (TJ). Implement overcurrent protection, undervoltage lockout, and thermal shutdown if necessary.

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