G3R75MT12J footprint, schematic symbol and 3D model by GeneSiC Semiconductor

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PCB Footprints

G3R75MT12J - GeneSiC Semiconductor PCB footprint - Other - Other - TO-263-7_2023-2

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Datasheet Download Datasheet
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Part Number G3R75MT12J
Manufacturer GeneSiC Semiconductor
Pin Count 8
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - TO-263-7_2023-2
Released Date Jun 7, 2023
Last Modified Date Jun 8, 2023 6:25 AM UTC
Pinout / Pin List Click Here (Member Only)

G3R75MT12J Details

Manufacturer Part Number:
G3R75MT12J
Rohs Code:
Yes
Part Life Cycle Code:
Transferred
Country Of Origin:
USA
ECCN Code:
EAR99
Manufacturer:
GeneSic Semiconductor Inc
YTEOL:
7
Avalanche Energy Rating (Eas):
199 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
1200 V
Drain Current-Max (ID):
38 A
Drain-source On Resistance-Max:
0.097 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-263
JESD-30 Code:
R-PSSO-G7
Number of Elements:
1
Number of Terminals:
7
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
196 W
Pulsed Drain Current-Max (IDM):
70 A
Reference Standard:
IEC-60747-8-4
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE

G3R75MT12J Frequently Asked Questions (FAQs)

A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
Ensure proper heat sinking, use a thermally conductive material for the PCB, and follow the recommended thermal design guidelines. Also, consider using a thermal interface material (TIM) between the device and the heat sink.
A gate drive circuit with a high current capability (e.g., 1A or higher) and a fast rise time (e.g., <10ns) is recommended. A gate resistor value between 10Ω to 22Ω is suitable for most applications.
Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
The device is rated for operation between -55°C to 150°C (TJ). Ensure the device is operated within the recommended voltage range (VDS) and current range (ID) specified in the datasheet.

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