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G3R75MT12K - GeneSiC Semiconductor

Description: MOSFET 1200V 75mohm TO-247-4 G3R SiC MOSFET

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G3R75MT12K Details

  • Manufacturer Part Number:

    G3R75MT12K

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

G3R75MT12K Frequently Asked Questions (FAQs)

  • GeneSic recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermally conductive material for the heat sink, and maintain a maximum junction temperature (Tj) below 150°C. Also, follow the recommended derating curves for current and voltage.
  • GeneSic recommends a gate drive voltage of 15V to 20V and a current of 2A to 5A for optimal switching performance. However, the exact values may vary depending on the specific application and circuit design.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit to prevent damage from voltage and current surges. GeneSic also recommends using a fuse or a current limiting resistor in series with the device.
  • The G3R75MT12K is suitable for operating frequencies up to 100 kHz. However, the optimal frequency range depends on the specific application, circuit design, and thermal management.

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