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GAN039-650NTBA - Nexperia

Description: 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

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GAN039-650NTBA - Nexperia PCB footprint - Other - Other - GAN039-650NTBA-1
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GAN039-650NTBA Details

  • Manufacturer Part Number:

    GAN039-650NTBA

  • Part Life Cycle Code:

    Active Unconfirmed

  • Package Description:

    SOT-8005, 12 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-07-31

  • Manufacturer:

    Nexperia

  • YTEOL:

    2

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN FET AND DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PDSO-G12

  • Number of Elements:

    2

  • Number of Terminals:

    12

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Reference Standard:

    AEC-Q101; IEC-60134

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GAN039-650NTBA Frequently Asked Questions (FAQs)

  • Nexperia recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Ensure proper heat sinking, follow the recommended PCB layout, and consider derating the device's power handling at high temperatures (above 125°C).
  • The GAN039-650NTBA can withstand voltage transients up to 700 V for a duration of 10 ms, but it's recommended to follow the datasheet's guidelines for voltage slew rates and dv/dt.
  • Yes, but it's crucial to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize differences in switching times and voltage drops.
  • Nexperia recommends a gate drive voltage of 15 V to 20 V, with a current capability of at least 2 A to 5 A, depending on the specific application and switching frequency.

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GAN039-650NTBA Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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